INTERFACIAL CUAL2 PRECIPITATE NUCLEATION AND GROWTH DURING THE DEPOSITION OF AL-4-PERCENT CU-1.5-PERCENT SI ALLOYS

被引：14

作者：

THOMAS, ME

KEYSER, TK

GOO, EKW

机构：

来源：

关键词：

D O I：

10.1063/1.336763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3768 / 3773

页数：6

共 8 条

[1] ELECTROMIGRATION-INDUCED FAILURES IN THIN-FILM AL-CU CONDUCTORS [J].

AGARWALA, BN ;

BERENBAUM, L ;

PERESSININ, P .

[2]

DENISON DR, 1979, J VAC SCI TECHNOL, V17, P388

[3]

KELLY A, 1963, PROGR MATERIALS SCI, V10

[4]

LAIRD C, 1966, ACTA METALL, V14, P1971

MADER, S ;

HERD, S .

[6]

REZ P, 1981, 39TH P EMSA M ATL, P262

[7]

ROSENBURG R, 1970, JUN EUR C AT TRANSP

THOMAS, G ;

WHELAN, MJ .

PHILOSOPHICAL MAGAZINE, 1961, 6 (69) :1103-&