STRAINED N-GA0.7AL0.3AS/INXGA1-XAS/GAAS MODULATION-DOPED STRUCTURES

被引：19

作者：

OKAMOTO, A

TOYOSHIMA, H

OHATA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 04期

关键词：

D O I：

10.1143/JJAP.26.539

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：539 / 542

页数：4

共 9 条

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