DC AND MICROWAVE CHARACTERISTICS OF A HIGH-CURRENT DOUBLE INTERFACE GAAS/INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR

被引：17

作者：

HENDERSON, T

KLEM, J

PENG, CK

GEDYMIN, JS

KOPP, W

MORKOC, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 16期

关键词：

D O I：

10.1063/1.96603

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1080 / 1082

页数：3

共 12 条

[1] HIGH-PERFORMANCE INVERTED AND LARGE CURRENT DOUBLE INTERFACE MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH THE BULK (AL,GA)AS REPLACED BY SUPERLATTICE AT THE INVERTED INTERFACE [J].

ARNOLD, D ;

HENDERSON, T ;

KLEM, J ;

FISCHER, R ;

KOPP, W ;

KETTERSON, A ;

MASSELINK, WT ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1984, 45 (08) :902-904

[2] MICROWAVE CHARACTERIZATION OF (AL,GA)AS/GAAS MODULATION-DOPED FETS - BIAS DEPENDENCE OF SMALL-SIGNAL PARAMETERS [J].

ARNOLD, DJ ;

FISCHER, R ;

KOPP, WF ;

HENDERSON, TS ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1399-1402

[3] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET) [J].

INOUE, K ;

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02) :L61-L63

[4] HIGH TRANSCONDUCTANCE INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

KETTERSON, A ;

MOLONEY, M ;

MASSELINK, WT ;

PENG, CK ;

KLEM, J ;

FISCHER, R ;

KOPP, W ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :628-630

[5]

KINOSHITA H, 1984, 3RD INT C MBE SAN FR

[6]

Masselink W. T., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P755

[7] CRYOGENIC OPERATION OF PSEUDOMORPHIC ALGAAS/INGAAS SINGLE-QUANTUM-WELL MODFETS [J].

MASSELINK, WT ;

KETTERSON, A ;

KLEM, J ;

KOPP, W ;

MORKOC, H .

ELECTRONICS LETTERS, 1985, 21 (20) :937-939

[8] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J].

MORKOC, H ;

WITKOWSKI, LC ;

DRUMMOND, TJ ;

STANCHAK, CM ;

CHO, AY ;

STREETMAN, BG .

ELECTRONICS LETTERS, 1980, 16 (19) :753-754

[9]

ROSENBERG J, 1985, 43RD ANN DEV RES C B

[10] AN IN0.15GA0.85 AS/GAAS PSEUDOMORPHIC SINGLE QUANTUM WELL HEMT [J].

ROSENBERG, JJ ;

BENLAMRI, M ;

KIRCHNER, PD ;

WOODALL, JM ;

PETTIT, GD .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :491-493

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