CRYOGENIC OPERATION OF PSEUDOMORPHIC ALGAAS/INGAAS SINGLE-QUANTUM-WELL MODFETS

被引：36

作者：

MASSELINK, WT

KETTERSON, A

KLEM, J

KOPP, W

MORKOC, H

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 20期

关键词：

D O I：

10.1049/el:19850663

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：937 / 939

页数：3

共 6 条

[1] BIAS DEPENDENCE AND LIGHT SENSITIVITY OF (AL,GA)AS/GAAS MODFETS AT 77-K [J].

DRUMMOND, TJ ;

FISCHER, RJ ;

KOPP, WF ;

MORKOC, H ;

LEE, K ;

SHUR, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1806-1811

[2] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[3]

LEE K, 1984, IEEE T ELECTRON DEV, V31, P29

[4] QUASI-FERMI LEVEL BENDING IN MODFETS AND ITS EFFECT ON FET TRANSFER CHARACTERISTICS [J].

PONSE, F ;

MASSELINK, WT ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1017-1023

[5]

ROSENBERG J, 1985, 43RD ANN DEV RES C B

[6] ELECTRON-ENERGY LEVELS IN GAAS-GA1-XALXAS HETEROJUNCTIONS [J].

STERN, F ;

DASSARMA, S .

PHYSICAL REVIEW B, 1984, 30 (02) :840-848

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