BIAS DEPENDENCE AND LIGHT SENSITIVITY OF (AL,GA)AS/GAAS MODFETS AT 77-K

被引：68

作者：

DRUMMOND, TJ

FISCHER, RJ

KOPP, WF

MORKOC, H

LEE, K

SHUR, MS

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 12期

关键词：

D O I：

10.1109/T-ED.1983.21449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1806 / 1811

页数：6

共 21 条

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[3] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES
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[4] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR
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[J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341
[5] CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS - EFFECT OF DONOR-ELECTRON SEPARATION
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 262 - 264
[6] DRUMMOND TJ, 1982, ELECTRON LETT, V18, P794
[7] FISCHER R, 1982, I PHYS C SER, V65, P157
[8] FIELD-INDUCED REEMISSION OF ELECTRONS TRAPPED IN SIO2
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1816 - 1818
[9] FRARY JM, 1981, SEMICOND INT, V4, P72
[10] PERSISTENT PHOTOCONDUCTIVITY IN (AL,GA)AS/GAAS MODULATION DOPED STRUCTURES - DEPENDENCE ON STRUCTURE AND GROWTH TEMPERATURE
KLEM, J
MASSELINK, WT
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SHUR, MS
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5214 - 5217

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