FIELD-INDUCED REEMISSION OF ELECTRONS TRAPPED IN SIO2

被引：17

作者：

FORBES, L ^{[1
]}

SUN, E ^{[1
]}

ALDERS, R ^{[1
]}

MOLL, J ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,INTEGRATED CIRCUITS LAB,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 11期

关键词：

D O I：

10.1109/T-ED.1979.19691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new form of hot electron injection and trapping in n-channel IGFET's is described, a necessary and sufficient condition for the emission of these trapped electrons is a reset pulse of negative gate and positive drain voltages. The effect of this trapping on device characteristics, reliability, and the proposed low-temperature operation of IGFET's is discussed. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1816 / 1818

页数：3

共 10 条

[1] Abbas S. A., 1975, 1975 International Electron Devices Meeting. (Technical digest), P35
[2] HOT-CARRIER INSTABILITY IN IGFETS
ABBAS, SA
DOCKERTY, RC
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 147 - 148
[3] AVALANCHE INJECTION INTO OXIDE IN SILICON GATE-CONTROLLED DEVICES .1. THEORY
BULUCEA, C
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 363 - 374
[4] FORBES L, 1979, HEWLETT-PACKARD J, V30, P29
[5] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE
HARA, H
OKAMOTO, Y
OHNUMA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1103 - +
[6] Keyes R. W., 1970, Proceedings of the IEEE, V58, P1914, DOI 10.1109/PROC.1970.8063
[7] Keyes R. W., 1977, Comments on Solid State Physics, V8, P37
[8] Keyes R. W., 1977, Comments on Solid State Physics, V8, P47
[9] SHALLOW-LEVEL ELECTRON TRAPS IN SIO2
NING, TH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1348 - 1348
[10] NING TH, UNPUBLISHED

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