AVALANCHE INJECTION INTO OXIDE IN SILICON GATE-CONTROLLED DEVICES .1. THEORY

被引：31

作者：

BULUCEA, C ^{[1
]}

机构：

[1] ICCE BANEASA,RES & DEV INST ELECTR COMPONENTS,STR EROU IANCU NICOLAE 32,BUCHAREST,ROMANIA

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 04期

关键词：

D O I：

10.1016/0038-1101(75)90092-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：363 / 374

页数：12

共 37 条

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[8] DEGRADATION OF MOS-TRANSISTORS RESULTING FROM JUNCTION AVALANCHE BREAKDOWN [J].

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MICROELECTRONICS AND RELIABILITY, 1972, 11 (04) :369-&

[9] MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE [J].

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[10]

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