MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE

被引：65

作者：

FROHMANB.D

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来源：

APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 08期

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D O I：

10.1063/1.1653685

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：332 / &

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共 7 条

[1] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[2] FROHMANBENTCHKO.D, 1971, ISSCC DIGEST TECHNIC
[3] STABILIZATION OF MOS DEVICES
HOFSTEIN, SR
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +
[4] KHANG D, 1967, BELL SYSTEM TECH J, V46, P1288
[5] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
SNOW, EH
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +
[6] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2
NICOLLIAN, EH
GOETZBERGER, A
BERGLUND, CN
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +
[7] SILICON-GATE TECHNOLOGY
VADASZ, LL
GROVE, AS
ROWE, TA
MOORE, GE
[J]. IEEE SPECTRUM, 1969, 6 (10) : 28 - &