SURFACE BREAKDOWN IN SILICON PLANAR JUNCTIONS - COMPUTER-AIDED EXPERIMENTAL DETERMINATION OF CRITICAL-FIELD

被引：19

作者：

BULUCEA, C ^{[1
]}

RUSU, A ^{[1
]}

POSTOLACHE, C ^{[1
]}

机构：

[1] ICCE BANEASA, R & D INST ELECTR COMPONENTS, ST EROU IANCU NICOLAE 32, BUCHAREST, ROMANIA

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 09期

关键词：

D O I：

10.1016/0038-1101(74)90040-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：881 / 888

页数：8

共 22 条

[1] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J].

BARTELINK, D ;

MOLL, JL ;

MEYER, NI .

PHYSICAL REVIEW, 1963, 130 (03) :972-+

[2]

BULUCEA C, 1974, 2 P INT C SOL SURF K

[3]

BULUCEA CD, 1973, IEEE T ELECTRON DEV, VED20, P692, DOI 10.1109/T-ED.1973.17730

[4]

BULUCEA CD, 1973, THESIS POLYTECHNIC I

[5] SURFACE BREAKDOWN IN SILICON PLANAR DIODES EQUIPPED WITH FIELD PLATE [J].

CONTI, F ;

CONTI, M .

SOLID-STATE ELECTRONICS, 1972, 15 (01) :93-+

[6] SPATIAL VARIATION OF QUASI-FERMI POTENTIALS IN REVERSE-BIASED P+-N JUNCTIONS AND ITS IMPLICATIONS IN TRANSITION REGION CAPACITANCE CALCULATIONS [J].

CSERVENY, SI ;

BULUCEA, CD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (02) :220-+

[7]

GRAAFF HCD, 1970, PHILIPS RES REP, V25, P21

[8]

Grove A.S., 1967, Doping vs Ef

[9] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J].

GROVE, AS ;

LEISTIKO, O ;

HOOPER, WW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) :157-+

[10] BREAKDOWN VOLTAGE OF PLANAR SILICON JUNCTIONS [J].

LEISTIKO, O ;

GROVE, AS .

SOLID-STATE ELECTRONICS, 1966, 9 (09) :847-&

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