DEGRADATION OF MOS-TRANSISTORS RESULTING FROM JUNCTION AVALANCHE BREAKDOWN

被引：8

作者：

DUNN, PJ

MELLOR, PJT

机构：

来源：

MICROELECTRONICS AND RELIABILITY | 1972年 / 11卷 / 04期

关键词：

D O I：

10.1016/0026-2714(72)90582-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：369 / &

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[1] MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE
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[2] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE
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[4] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS
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[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &
[5] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2
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[J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +