AVALANCHE INJECTION INTO OXIDE IN SILICON GATE-CONTROLLED DEVICES .1. THEORY

被引：31

作者：

BULUCEA, C ^{[1
]}

机构：

[1] ICCE BANEASA,RES & DEV INST ELECTR COMPONENTS,STR EROU IANCU NICOLAE 32,BUCHAREST,ROMANIA

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 04期

关键词：

D O I：

10.1016/0038-1101(75)90092-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：363 / 374

页数：12

共 37 条

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BERGLUND, CN .

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[23]

NICOLLIAN EH, 1967, 6 P ANN REL PHYS S, P66

[24]

OLDHAM WG, 1972, IEEE T ELECTRON DEVI, VED19, P1056

[25] ELECTRON INJECTION INTO SIO2 FROM AN AVALANCHING P-N-JUNCTION [J].

PEPPER, M .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (17) :2124-2130

[26] HOT ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE BY SURFACE AVALANCHE [J].

POIRIER, R ;

OLIVIER, J .

APPLIED PHYSICS LETTERS, 1969, 15 (11) :364-&

[27]

RUSU A, IN PRESS

[28]

SCHENCK JF, 1967, 6 P ANN REL PHYS S, P31

[29] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+

[30]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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