ELECTRON INJECTION INTO SIO2 FROM AN AVALANCHING P-N-JUNCTION

[1] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J]. PHYSICAL REVIEW, 1963, 130 (03): : 972 - +

[2] PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 573 - +

[3] INFLUENCE DE LINTERACTION ELECTRON-ELECTRON SUR LEMISSION DELECTRONS CHAUDS A PARTIR DES JONCTIONS P-N PEU PROFONDES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (08) : 1295 - +

[4] TEMPERATURE DEPENDENCE OF HOT ELECTRON DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELD [J]. SOLID-STATE ELECTRONICS, 1968, 11 (10) : 917 - +

[5] ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 46 - +

[6] ELECTRON HALL EFFECT IN SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1967, 164 (03): : 1145 - &

[7] GRAAFF HCD, 1970, PHILIPS RES REP, V25, P21

[8] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[9] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 157 - +

[10] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1103 - +

[1] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J]. PHYSICAL REVIEW, 1963, 130 (03): : 972 - +

[2] PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 573 - +

[3] INFLUENCE DE LINTERACTION ELECTRON-ELECTRON SUR LEMISSION DELECTRONS CHAUDS A PARTIR DES JONCTIONS P-N PEU PROFONDES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (08) : 1295 - +

[4] TEMPERATURE DEPENDENCE OF HOT ELECTRON DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELD [J]. SOLID-STATE ELECTRONICS, 1968, 11 (10) : 917 - +

[5] ELECTRON DRIFT VELOCITY IN AVALANCHING SILICON DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 46 - +

[6] ELECTRON HALL EFFECT IN SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1967, 164 (03): : 1145 - &

[7] GRAAFF HCD, 1970, PHILIPS RES REP, V25, P21

[8] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[9] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 157 - +

[10] A NEW INSTABILITY IN MOS TRANSISTOR CAUSED BY HOT ELECTRON AND HOLE INJECTION FROM DRAIN AVALANCHE PLASMA INTO GATE OXIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1103 - +