HIGH TRANSCONDUCTANCE INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：76

作者：

KETTERSON, A

MOLONEY, M

MASSELINK, WT

PENG, CK

KLEM, J

FISCHER, R

KOPP, W

MORKOC, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 12期

关键词：

D O I：

10.1109/EDL.1985.26255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：628 / 630

页数：3

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[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS
BANDY, S
NISHIMOTO, C
HYDER, S
HOOPER, C
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819
[2] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS
CHAND, N
HENDERSON, T
KLEM, J
MASSELINK, WT
FISCHER, R
CHANG, YC
MORKOC, H
[J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492
[3] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
GULDNER, Y
VIEREN, JP
VOISIN, P
VOOS, M
RAZEGHI, M
POISSON, MA
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 877 - 879
[4] HIROSE K, 1985, 12TH P INT S GAAS RE
[5] DESIGN AND FABRICATION OF HIGH TRANSCONDUCTANCE MODULATION-DOPED (AL,GA)AS/GAAS FETS
LEE, K
SHUR, MS
DRUMMOND, TJ
SU, SL
LYONS, WG
FISCHER, R
MORKOC, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 186 - 189
[6] NOISE BEHAVIOR OF 1-MU-M GATE-LENGTH MODULATION-DOPED FETS FROM 10(-2) TO 10(8) HZ
LIU, SM
DAS, MB
KOPP, W
MORKOC, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 453 - 455
[7] THE HEMT - A SUPERFAST TRANSISTOR
MORKOC, H
SOLOMON, PM
[J]. IEEE SPECTRUM, 1984, 21 (02) : 28 - 35
[8] SCHOTTKY-BARRIER HEIGHTS OF MOLECULAR-BEAM EPITAXIAL METAL-ALGAAS STRUCTURES
OKAMOTO, K
WOOD, CEC
EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 636 - 638
[9] AN IN0.15GA0.85 AS/GAAS PSEUDOMORPHIC SINGLE QUANTUM WELL HEMT
ROSENBERG, JJ
BENLAMRI, M
KIRCHNER, PD
WOODALL, JM
PETTIT, GD
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 491 - 493