GROWTH OF HIGH-QUALITY ZNSE BY MOVPE ON (100) ZNSE SUBSTRATE

被引：28

作者：

YODO, T

KOYAMA, T

YAMASHITA, K

机构：

[1] Nippon Sheet Glass Co, Toyosatomachi, Jpn, Nippon Sheet Glass Co, Toyosatomachi, Jpn

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

CRYSTALS - Epitaxial Growth - PHOTOLUMINESCENCE - SUBSTRATES - X-RAYS - Diffraction;

D O I：

10.1016/0022-0248(90)90729-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, we report the MOVPE growth of undoped ZnSe layers on (100) ZnSe substrates cut from ingots grown by iodine vapor transport. The purpose of the present paper is to show the effects of heat treatment of the substrates before growth under various atmospheres, on the morphological, crystallographic and photoluminescent properties, and the optimum cleaning procedure of the substrates to remove surface contaminants and oxide layers.

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页码：273 / 278

页数：6

相关论文

共 14 条

[1]

AVEN M, 1973, J LUMINESCENCE, V1, P195

[2] HIGH-PURITY ZNSE OBTAINED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION EPITAXY [J].

BLANCONNIER, P ;

HOGREL, JF ;

JEANLOUIS, AM ;

SERMAGE, B .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6895-6900

[3] LATTICE-MISMATCH EFFECTS ON PROPERTIES IN ZNSE LAYER GROWN ON GAAS SUBSTRATE BY LOW-PRESSURE OMVPE [J].

FUJITA, S ;

YODO, T ;

SASAKI, A .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :27-30

[4] GROWTH TEMPERATURE-DEPENDENCE OF CRYSTALLOGRAPHIC AND LUMINESCENT PROPERTIES OF ZNSXSE1-X (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) BY LOW-PRESSURE MOVPE [J].

FUJITA, S ;

MATSUDA, Y ;

SASAKI, A .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :231-236

[5] SHALLOW ACCEPTORS AND P-TYPE ZNSE [J].

KOSAI, K ;

FITZPATRICK, BJ ;

GRIMMEISS, HG ;

BHARGAVA, RN ;

NEUMARK, GF .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :194-196

[6] COHERENT GROWTH OF ZNSE ON GAAS BY MOCVD [J].

MITSUHASHI, H ;

MITSUISHI, I ;

MIZUTA, M ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L578-L580

[7] PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LOW-ENERGY ION DOPING [J].

MITSUYU, T ;

OHKAWA, K ;

YAMAZAKI, O .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1348-1350

[8] HOMOEPITAXIAL AND HETEROEPITAXIAL GROWTH OF HIGH-QUALITY ZNSE BY MOLECULAR-BEAM EPITAXY [J].

PARK, RM ;

MAR, HA ;

SALANSKY, NM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1637-1640

[9] GROWTH AND DOPING OF ZNSE AND ZNSXSE1-X BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J].

STUTIUS, W .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :1-9

[10] HIGH-PURITY ZNSE GROWN BY LIQUID-PHASE EPITAXY [J].

WERKHOVEN, C ;

FITZPATRICK, BJ ;

HERKO, SP ;

BHARGAVA, RN ;

DEAN, PJ .

APPLIED PHYSICS LETTERS, 1981, 38 (07) :540-542