LATTICE-MISMATCH EFFECTS ON PROPERTIES IN ZNSE LAYER GROWN ON GAAS SUBSTRATE BY LOW-PRESSURE OMVPE

被引：37

作者：

FUJITA, S

YODO, T

SASAKI, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(85)90113-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：27 / 30

页数：4

共 14 条

[1]

BLANCONNIER P, 1978, THIN SOLID FILMS, V55, P375, DOI 10.1016/0040-6090(78)90154-2

[2] HIGH-PURITY ZNSE OBTAINED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION EPITAXY [J].

BLANCONNIER, P ;

HOGREL, JF ;

JEANLOUIS, AM ;

SERMAGE, B .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6895-6900

[3] COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS [J].

DEAN, PJ .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 81 (02) :625-646

[4] GROWTH AND PROPERTIES OF UNDOPED N-TYPE ZNSE BY LOW-TEMPERATURE AND LOW-PRESSURE OMVPE [J].

FUJITA, S ;

MATSUDA, Y ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06) :L360-L362

[5] GROWTH TEMPERATURE-DEPENDENCE OF CRYSTALLOGRAPHIC AND LUMINESCENT PROPERTIES OF ZNSXSE1-X (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) BY LOW-PRESSURE MOVPE [J].

FUJITA, S ;

MATSUDA, Y ;

SASAKI, A .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :231-236

[6]

NEUBERGER M, 1969, 2 6 SEMICONDUCTING C

[7] LATTICE STRUCTURE AT ZNSE-GAAS HETEROJUNCTION INTERFACES PREPARED BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].

PONCE, FA ;

STUTIUS, W ;

WERTHEN, JG .

THIN SOLID FILMS, 1983, 104 (1-2) :133-143

[8]

ROTH WL, 1967, PHYSICS CHEMISTRY 2, P127

[9] PHOTO-LUMINESCENCE AND HETEROJUNCTION PROPERTIES OF ZNSXSE1-X EPITAXIAL LAYERS ON GAAS AND GE GROWN BY ORGANOMETALLIC CVD [J].

STUTIUS, W .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :95-109

[10] GROWTH AND DOPING OF ZNSE AND ZNSXSE1-X BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J].

STUTIUS, W .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :1-9

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