LATTICE-MISMATCH EFFECTS ON PROPERTIES IN ZNSE LAYER GROWN ON GAAS SUBSTRATE BY LOW-PRESSURE OMVPE

被引:37
作者
FUJITA, S
YODO, T
SASAKI, A
机构
关键词
D O I
10.1016/0022-0248(85)90113-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:27 / 30
页数:4
相关论文
共 14 条
[11]   HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY (HRTEM) OF INTERFACES IN EPITAXIAL ZNSEYS1-Y GROWN BY MOCVD [J].
WILLIAMS, JO ;
NG, TL ;
WRIGHT, AC ;
COCKAYNE, B ;
WRIGHT, PJ .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :237-244
[12]   THE ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION OF ZNS AND ZNSE AT ATMOSPHERIC-PRESSURE [J].
WRIGHT, PJ ;
COCKAYNE, B .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :148-154
[13]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF LOW-RESISTIVITY ZNSE FILMS [J].
YAO, T ;
MAKITA, Y ;
MAEKAWA, S .
APPLIED PHYSICS LETTERS, 1979, 35 (02) :97-98
[14]   GROWTH OF HIGH-QUALITY ZNSE FILMS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
YOSHIKAWA, A ;
TANAKA, K ;
YAMAGA, S ;
KASAI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06) :L424-L426