LATTICE STRUCTURE AT ZNSE-GAAS HETEROJUNCTION INTERFACES PREPARED BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：44

作者：

PONCE, FA ^{[1
]}

STUTIUS, W ^{[1
]}

WERTHEN, JG ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

THIN SOLID FILMS | 1983年 / 104卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(83)90554-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：133 / 143

页数：11

相关论文

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