ANNEALING BEHAVIOR OF DISLOCATION LOOPS NEAR THE PROJECTED ION RANGE IN HIGH-DOSE AS+(-) AND P+-IMPLANTED (001) SI

被引：2

作者：

HSU, SN

CHEN, LJ

机构：

[1] Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96244-F

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The annealing behavior of dislocation loops near the projected range (R(p) loops) in (001) Si implanted by 150 keV As+ and 65 keV P+ to a dose of 5 x 10(15) cm-2 has been studied by both plane-view and cross-sectional transmission electron microscopy and Rutherford-backscattering spectrometry. The annealing behavior of R(p) loops in single- and two-step annealed samples and in sample with an oxide capping layer were found to be consistent with the suggestion that their formation is related to the agglomeration of self-interstitials mediated by the presence of a high concentration of electrically inactive arsenic or phosphorous atoms. However, the R(p) loops were found to be more prone to be annealed out in P+-implanted than in As+-implanted (001) Si.

引用

页码：620 / 624

页数：5

共 8 条

[1]

Beanland D. G., 1984, Ion implantation and beam processing, P261

[2] DIRECT OBSERVATION OF DISCRETE LAYERS OF DISLOCATION LOOPS NEAR THE PROJECTED ION RANGES IN HIGH-DOSE P+-IMPLANTED (001)SI BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY [J].