A REVIEW OF RAPID THERMAL ANNEALING (RTA) OF B, BF2 AND AS IONS IMPLANTED INTO SILICON

被引：92

作者：

SEIDEL, TE ^{[1
]}

LISCHNER, DJ ^{[1
]}

PAI, CS ^{[1
]}

KNOELL, RV ^{[1
]}

MAHER, DM ^{[1
]}

JACOBSON, DC ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90562-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：251 / 260

页数：10

共 53 条

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LIU, J ;

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[7] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J].

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[8]

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[9]

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[10]

FAIR RB, UNPUB J ELECTROCHEM

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