NEW MBE GROWTH METHOD FOR INSB QUANTUM-WELL BOXES

被引：323

作者：

KOGUCHI, N

TAKAHASHI, S

CHIKYOW, T

机构：

[1] National Research Institute for Metals, Tsukuba Laboratories, Tsukuba, Ibaraki, 305

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91064-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We propose a new MBE growth method for InSb microcrystals on CdTe which has a nearly equal lattice constant to InSb. The average size of the InSb microcrystals was about 150 nm x 200 nm x 70 nm. This method is based on the Sb incorporation into In droplets and thought to be useful for fabricating quantum well boxes.

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页码：688 / 692

页数：5

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