FORMATION OF INTERFACIAL LAYERS IN INSB-CDTE HETEROSTRUCTURES STUDIED BY RAMAN-SCATTERING

被引：56

作者：

ZAHN, DRT ^{[1
]}

MACKEY, KJ ^{[1
]}

WILLIAMS, RH ^{[1
]}

MUNDER, H ^{[1
]}

GEURTS, J ^{[1
]}

RICHTER, W ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 1,D-5100 AACHEN,FED REP GER

来源：

关键词：

D O I：

10.1063/1.98085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：742 / 744

页数：3

共 12 条

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[8] CHEMICAL AND ELECTRONIC-STRUCTURE OF INSB-CDTE INTERFACES
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