TRANSPORT PROPERTIES OF BISMUTH-FILMS

被引：30

作者：

INOUE, M ^{[1
]}

TAMAKI, Y ^{[1
]}

YAGI, H ^{[1
]}

机构：

[1] FUKUI UNIV,DEPT APPL PHYS,FUKUI 910,JAPAN

来源：

关键词：

D O I：

10.1063/1.1663458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1562 / 1566

页数：5

共 16 条

[1] CHAMBERS RG, 1969, THEORY METALS, pCH4
[2] THICKNESS-DEPENDENT OSCILLATORY BEHAVIOR OF RESISTIVITY AND HALL COEFFICIENT IN THIN SINGLE-CRYSTAL BISMUTH FILMS
DUGGAL, VP
RUP, R
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 492 - &
[3] GALVANOMAGNETIC STUDIES OF BISMUTH FILMS IN QUANTUM-SIZE-EFFECT REGION
GARCIA, N
STRONGIN, M
KAO, YH
[J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2029 - &
[4] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
HERRING, C
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290
[5] ELECTRICAL TRANSPORT PROPERTIES OF THIN BISMUTH FILMS
HOFFMAN, RA
FRANKL, DR
[J]. PHYSICAL REVIEW B, 1971, 3 (06): : 1825 - &
[6] ANOMALIES IN HALL-COEFFICIENT OF BISMUTH FILMS
INOUE, M
YAGI, H
TAMAKI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (02) : 310 - 311
[7] CRYSTAL-GROWTH AND ELECTRICAL PROPERTIES OF MN-DOPED SNTE
INOUE, M
YAGI, H
MORISHITA, S
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1973, 34 (02) : 562 - 562
[8] BAND-EDGE CALCULATIONS FOR BISMUTH AND BISMUTH-ANTIMONY ALLOYS
MARTIN, BG
LERNER, LS
[J]. PHYSICAL REVIEW B, 1972, 6 (08): : 3032 - &
[9] Ogrin Y. F., 1967, ZH EKSP TEOR FIZ, V53, P1218
[10] OGRIN YF, 1968, SOV PHYS JETP-USSR, V26, P714