SUBTHRESHOLD KINKS IN FULLY DEPLETED SOI MOSFETS

被引：22

作者：

FOSSUM, JG

KRISHNAN, S

FAYNOT, O

CRISTOLOVEANU, S

RAYNAUD, C

机构：

[1] CEN GRENOBLE,DMEL,LETI,F-38054 GRENOBLE,FRANCE

[2] ENSERG,LPCS,F-38016 GRENOBLE,FRANCE

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 12期

关键词：

D O I：

10.1109/55.475581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measured current-voltage characteristics of scaled, floating-body, fully depleted (FD) SOI MOSFET's that show subthreshold kinks controlled by the back-gate (substrate) bias are presented. The underlying physical mechanism is described, and is distinguished from the well known kink effect in partially depleted devices, The physical insight attained qualifies the meaning of FD/SOI and implies new design issues for low-voltage FD/SOI CMOS.

引用

页码：542 / 544

页数：3

共 12 条

[1]

CHEN Z, 1994, OCT P INT SOI C, P57

[2] ANALYSIS AND CONTROL OF FLOATING-BODY BIPOLAR EFFECTS IN FULLY DEPLETED SUBMICROMETER SOI MOSFETS [J].