INITIAL EPITAXIAL-GROWTH OF COPPER SILICIDE ON SI(111) STUDIED BY LOW-ENERGY ELECTRON-MICROSCOPY AND PHOTOEMISSION ELECTRON-MICROSCOPY

被引：54

作者：

MUNDSCHAU, M

BAUER, E

TELIEPS, W

SWIECH, W

机构：

[1] WROCLAW B BEIRUT UNIV,INST EXPTL PHYS,PL-50205 WROCLAW,POLAND

[2] SONDERFORSCH BEREICH 126 GOETTINGEN CLAUSTHAL,D-3392 CLAUSTHAL ZELLERFE,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 12期

关键词：

D O I：

10.1063/1.343227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4747 / 4752

页数：6

共 45 条

[1] PHOTOEMISSION INVESTIGATION OF SI(111)-CU INTERFACES [J].

ABBATI, I ;

GRIONI, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :631-635

[2] METHODS OF SURFACE STUDIES DEPENDING ON INELASTIC-SCATTERING OF ELECTRONS [J].

BAUER, E .

VACUUM, 1972, 22 (11) :539-552

[3]

BAUER E, IN PRESS EVALUATION

[4]

BAUER E, 1987, SCANNING MICROSCOP S, V1, P99

[5]

BAUER E, 1988, STUDY SURFACES INTER, P195

[6]

BETHGE H, 1982, 10TH P INT C EL MICR, V1, P69

[7] ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS [J].

Calandra, C. ;

Bisi, O. ;

Ottaviani, G. .

SURFACE SCIENCE REPORTS, 1985, 4 (5-6) :271-364

[8] METASTABILITY OF THE SI(111) CU INTERFACE - A SPATIALLY RESOLVED AUGER LINE-SHAPE SPECTROSCOPY INVESTIGATION [J].

CALLIARI, L ;

MARCHETTI, F ;

SANCROTTI, M .

PHYSICAL REVIEW B, 1986, 34 (02) :521-525

[9] CHARACTERIZATION OF INTERMIXING AT METAL-SEMICONDUCTOR INTERFACES BY ANGLE-RESOLVED AUGER-ELECTRON EMISSION - CU/SI(111)-7X7 [J].

CHAMBERS, SA ;

HOWELL, GA ;

GREENLEE, TR ;

WEAVER, JH .

PHYSICAL REVIEW B, 1985, 31 (10) :6402-6410

[10] ATOMIC-STRUCTURE OF THE CU/SI(111) INTERFACE BY HIGH-ENERGY CORE-LEVEL AUGER-ELECTRON DIFFRACTION [J].

CHAMBERS, SA ;

ANDERSON, SB ;

WEAVER, JH .

PHYSICAL REVIEW B, 1985, 32 (02) :581-587

← 1 2 3 4 5 →