PHOTO-VOLTAIC EFFICIENCY OF INSE SOLAR-CELLS

被引：64

作者：

SEGURA, A

CHEVY, A

GUESDON, JP

BESSON, JM

机构：

[1] UNIV PARIS 06, CNRS, LUMINESCENCE LAB, F-75230 PARIS 05, FRANCE

[2] UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE

来源：

SOLAR ENERGY MATERIALS | 1980年 / 2卷 / 02期

关键词：

D O I：

10.1016/0165-1633(79)90015-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Indium selenide n-type substrates made from ordinary-grade elements, are suitable to make heterojunctions with semitransparent platinum layers. Those low-cost devices have photovoltaic efficiencies for solar energy conversion under 6%, at the present time. They can be readily improved to reach external efficiencies in the 10% range. © 1980.

引用

页码：159 / 165

页数：7

共 7 条

[1]

Atakishiev S. M., 1969, Physica Status Solidi B, V32, pk33, DOI 10.1002/pssb.19690320160

[2]

CAMASSEL J, 1978, PHYS REV B, V17, P4718, DOI 10.1103/PhysRevB.17.4718

[3] GROWTH OF CRYSTALLINE SLABS OF LAYERED INSE BY CZOCHRALSKI METHOD [J].

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JOURNAL OF CRYSTAL GROWTH, 1978, 43 (06) :756-759

[4] LARGE INSE MONOCRYSTALS GROWN FROM A NONSTOICHIOMETRIC MELT [J].

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JOURNAL OF CRYSTAL GROWTH, 1977, 38 (01) :118-122

[5] PHOTOVOLTAIC PROPERTIES OF GASE AND INSE JUNCTIONS [J].

SEGURA, A ;

BESSON, JM ;

CHEVY, A ;

MARTIN, MS .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 38 (02) :345-351

[6] PHOTO-VOLTAIC EFFECT IN INSE APPLICATION TO SOLAR-ENERGY CONVERSION [J].

SEGURA, A ;

GUESDON, JP ;

BESSON, JM ;

CHEVY, A .

REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (01) :253-257

[7]

SEGURA A, 1977, THESIS PARIS

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