BROAD-BAND LOW-POWER AMPLIFIER WITH HIGH-GAIN AND MIXER MODES USING QUANTUM-WELL GAAS-FET TECHNOLOGY

被引：1

作者：

WENNEKERS, P

BOSCH, R

REINERT, W

HUELSMANN, A

KAUFEL, G

KOEHLER, K

RAYNOR, B

SCHNEIDER, J

机构：

[1] Fraunhofer-Institute for Applied Solid State Physics

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 13期

关键词：

AMPLIFIERS; FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR JUNCTIONS;

D O I：

10.1049/el:19920784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A broadband amplifier chip has been fabricated using enhancement/depletion quantum-well FETs with 0.3-mu-m gate lengths. In amplifier mode with unmatched input and single ended output the chip exhibits 30 dB gain and 6.5 GHz bandwidth. Matching extends the bandwidth to 9.0 GHz. In mixer mode at 12 GHz input frequency and 1.5 GHz IF frequency the chip shows 11.5 dB conversion gain. The chip has a. power dissipation of 125 m W at a supply voltage of 3.50 V.

引用

页码：1241 / 1243

页数：3

共 5 条

[1] 10 GHZ BANDWIDTH, 20 DB GAIN LOW-NOISE DIRECT-COUPLED AMPLIFIER ICS USING AU/WSIN GAAS-MESFET [J].