FORMATION OF A DX CENTER IN INP UNDER HYDROSTATIC-PRESSURE

被引：33

作者：

WOLK, JA

WALUKIEWICZ, W

THEWALT, MLW

HALLER, EE

机构：

[1] LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

[2] SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA

[3] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.68.3619

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have discovered a DX center in InP:S under hydrostatic pressure greater than 82 kbar. This defect exhibits the persistent photoconductivity typical of such centers. The optical ionization energy for this new DX center is between 0.86 and 1.02 eV, and we have measured the energy dependence of the optical absorption cross section. The thermal barrier for capture from the shallow donor state into the deep DX state is in the range 0.23-0.33 eV. We estimate that at zero pressure the energy of the DX center lies 0.51 +/- 0.07 eV above the GAMMA-conduction-band minimum.

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页码：3619 / 3622

页数：4

相关论文

共 25 条

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].

ANDERSON, PW .

PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955

[2] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[3] PRESSURE COEFFICIENTS OF BAND-GAPS IN SEMICONDUCTORS [J].

CHANG, KJ ;

FROYEN, S ;

COHEN, ML .

SOLID STATE COMMUNICATIONS, 1984, 50 (02) :105-107

[4] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION [J].

CRAFORD, MG ;

STILLMAN, GE ;

ROSSI, JA ;

HOLONYAK, N .

PHYSICAL REVIEW, 1968, 168 (03) :867-&

[5]

DABROWSKI J, 1990, 20TH P INT C PHYS SE, P729

[6] DIRECT EVIDENCE FOR THE NEGATIVE-U PROPERTY OF THE DX-CENTER AS STUDIED BY HYDROSTATIC-PRESSURE EXPERIMENTS ON GAAS SIMULTANEOUSLY DOPED WITH GE AND SI [J].

FUJISAWA, T ;

YOSHINO, J ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (03) :L388-L390

[7]

GONI AR, 1989, PHYS REV B, V39, P3178, DOI 10.1103/PhysRevB.39.3178

[8] PHOTOCONDUCTIVITY SATURATION OF ALGAAS-SI - A NEW CRITERION FOR NEGATIVE-U [J].

JANTSCH, W ;

WILAMOWSKI, Z ;

OSTERMAYER, G .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (10B) :B47-B50

[9]

Khachaturyan K., 1989, Materials Science Forum, V38-41, P1067, DOI 10.4028/www.scientific.net/MSF.38-41.1067

[10] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030