INFLUENCE OF CARBON ON PRECIPITATION OF COPPER IN SILICON SINGLE CRYSTALS

被引:31
作者
FIERMANS, L
VENNIK, J
机构
来源
PHYSICA STATUS SOLIDI | 1967年 / 22卷 / 02期
关键词
D O I
10.1002/pssb.19670220218
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:463 / &
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共 12 条
[1]   PRECIPITATION ON A DISLOCATION [J].
BULLOUGH, R ;
NEWMAN, RC ;
WAKEFIELD, J ;
WILLIS, JB .
NATURE, 1959, 183 (4653) :34-35
[2]  
BULLOUGH R, 1963, PROG SEMICOND, V7, P99
[3]   PRECIPITATION BEHAVIOUR OF COPPER IN SILICON SINGLE CRYSTALS [J].
FIERMANS, L ;
VENNIK, J .
PHYSICA STATUS SOLIDI, 1965, 12 (01) :277-&
[4]   MICROPROBE INVESTIGATIONS OF COPPER PRECIPITATES IN SILICON SINGLE CRYSTALS [J].
FIERMANS, L ;
VENNIK, J .
PHYSICA STATUS SOLIDI, 1967, 21 (02) :627-&
[5]  
FURUSHO K, 1964, JPN J APPL PHYS, V3, P203
[6]   DISLOCATIONS IN THE DIAMOND LATTICE [J].
HORNSTRA, J .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :129-141
[7]   ELECTRICAL PROPERTIES OF COPPER SEGREGATES IN SILICON P-N JUNCTIONS [J].
LAWRENCE, JE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) :796-&
[8]   EQUILIBRATION OF LATTICE DEFECTS IN REAL CRYSTALS [J].
MITCHELL, JW .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) :406-&
[9]   VIBRATIONAL ABSORPTION OF CARBON IN SILICON [J].
NEWMAN, RC ;
WILLIS, JB .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) :373-&
[10]  
SCHENK W, 1965, SOLID STATE ELECTRON, V8, P767