APPLICATIONS OF INSITU SIMS DURING PROCESSING OF ELECTRONIC MATERIALS

被引：3

作者：

WEBB, AP ^{[1
]}

SMITH, JA ^{[1
]}

机构：

[1] HIDDEN ANALYT LTD,WARRINGTON WA5 5TN,ENGLAND

来源：

SURFACE AND INTERFACE ANALYSIS | 1988年 / 12卷 / 1-12期

关键词：

Dielectric Materials--Processing - Etching - Mass Spectrometers - Metals and Alloys--Processing - Semiconductor Materials--Processing;

D O I：

10.1002/sia.740120506

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An in situ SIMS system is described that is capable of providing accurate and reliable control in determining the termination of processes while etching through multi-layer structures. The instrumentation is described and how progressive alterations have been implemented to improve the sensitivity. Various applications are described which show the wide range of material systems that have already been addressed.

引用

页码：303 / 308

页数：6