INTERFACE ANALYSIS DURING ETCHBACK OF SILICON-OXIDE

被引:8
作者
CRAMER, L [1 ]
DUWE, H [1 ]
JUNGBLUT, H [1 ]
LANGE, P [1 ]
LEWERENZ, HJ [1 ]
机构
[1] FRAUNHOFER INST MIKROSTRUKTURTECH,W-1000 BERLIN 33,GERMANY
关键词
D O I
10.1088/0953-8984/3/S/012
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Etching of thermal oxides on Si(100) wafers in acidic fluoride-containing solutions is monitored by simultaneous optical and electrical measurements, the lat-ter including the dark current and the probe light induced photocurrent. For in situ optical characterization a new ellipsometric configuration is used, which allows ac-curate measurements at low probe light intensity. This approach is shown to reduce photocorrosion of the investigated n-doped samples to a level where ellipsometric information about the silicon electrolyte interface becomes accessible. In situ ellipsometric results show some residual film. This is contrasted by ex situ STM giving no evidence for a silicon surface covered with several monolayers of an absorbing film.
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收藏
页码:S77 / S83
页数:7
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