OPTIMIZED PROTON IMPLANTATION STEP FOR VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：10

作者：

RESSEL, P

STRUSNY, H

GRAMLICH, S

ZEIMER, U

SEBASTIAN, J

VOGEL, K

机构：

[1] Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 10期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; LASERS; ION IMPLANTATION;

D O I：

10.1049/el:19930612

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of proton implantation in the distributed Bragg reflectors of vertical-cavity surface-emitting laser structures has been studied via measurement of the photoluminescence for different implantation and annealing conditions. It is shown that by optimal annealing the isolating layer can be positioned close to the active region with no detectable deterioration of photoluminescence.

引用

页码：918 / 919

页数：2

共 5 条

[1] PERFORMANCE OF GAIN-GUIDED SURFACE EMITTING LASERS WITH SEMICONDUCTOR DISTRIBUTED BRAGG REFLECTORS
HASNAIN, G
TAI, K
YANG, L
WANG, YH
FISCHER, RJ
WYNN, JD
WEIR, B
DUTTA, NK
CHO, AY
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1377 - 1385
[2] VERTICAL-CAVITY SURFACE-EMITTING LASERS - DESIGN, GROWTH, FABRICATION, CHARACTERIZATION
JEWELL, JL
HARBISON, JP
SCHERER, A
LEE, YH
FLOREZ, LT
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1332 - 1346
[3] PEARTON SJ, 1988, SOLID STATE PHENOM, V1, P247
[4] DEFECTS IN WEAKLY DAMAGED ION-IMPLANTED GAAS AND OTHER III-V SEMICONDUCTORS
WENDLER, E
WESCH, W
GOTZ, G
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 112 (01): : 289 - 299
[5] Ziegler J., 1985, STOPPING RANGES IONS

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