A MODEL FOR LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION IN A HOT-WALL TUBULAR REACTOR

被引：27

作者：

HOUF, WG ^{[1
]}

GRCAR, JF ^{[1
]}

BREILAND, WG ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 17卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(93)90100-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A general fundamental model for low pressure chemical vapor deposition in a multiwafer reactor has been developed and evaluated in terms of its ability to predict polycrystalline silicon growth rate data from a commercial reactor. The model incorporates a fundamental description of the chemical kinetics of silane based on molecular beam measurements for the reactive sticking coefficient of silane on silicon. Predictions from the model are found to be in excellent agreement with the reactor deposition data for a wide range of typical operating conditions.

引用

页码：163 / 171

页数：9

共 22 条

[1] EXPERIMENTAL-VERIFICATION OF A FUNDAMENTAL MODEL FOR MULTIWAFER LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF POLYSILICON [J].