THE DEPOSITION OF SILICON FROM SILANE IN A LOW-PRESSURE HOT-WALL SYSTEM

[1] BROWN WA, 1979, SOLID STATE TECHNOL, V22, P51

[2] GROWTH KINETICS AND CAPTURE OF IMPURITIES DURING GAS-PHASE CRYSTALLIZATION [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 55 - 76

[3] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .3. THE SIH4-H2-N2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) : 443 - 452

[4] DITTMER G, UNPUB

[5] STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) : 927 - 932

[6] KUIPER AET, UNPUB

[7] KINETICS AND MECHANISM OF THE SILANE DECOMPOSITION [J]. INTERNATIONAL JOURNAL OF CHEMICAL KINETICS, 1979, 11 (11) : 1167 - 1182

[8] LOW-PRESSURE DEPOSITION OF POLYCRYSTALLINE SILICON FROM SILANE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (02) : 310 - 322

[1] BROWN WA, 1979, SOLID STATE TECHNOL, V22, P51

[2] GROWTH KINETICS AND CAPTURE OF IMPURITIES DURING GAS-PHASE CRYSTALLIZATION [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 55 - 76

[3] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .3. THE SIH4-H2-N2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) : 443 - 452

[4] DITTMER G, UNPUB

[5] STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) : 927 - 932

[6] KUIPER AET, UNPUB

[7] KINETICS AND MECHANISM OF THE SILANE DECOMPOSITION [J]. INTERNATIONAL JOURNAL OF CHEMICAL KINETICS, 1979, 11 (11) : 1167 - 1182

[8] LOW-PRESSURE DEPOSITION OF POLYCRYSTALLINE SILICON FROM SILANE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (02) : 310 - 322