SELECTIVE LPCVD TUNGSTEN FOR CONTACT BARRIER APPLICATIONS

[1] [Anonymous], PHYS SEMICONDUCTOR D

[2] BEINGLASS I, 1981, ELECTROCHEM SOC EXT, V812, P921

[3] BLEWER RS, 1984, ELECTROCHEMICAL SOC, V842, P601

[4] BLEWER RS, 1985, ELECTROCHEMICAL SOC, P116

[5] BOMAN M, 1984, ELECTROCHEMICAL SOC, P150

[6] GARGINI P, 1981, ELECTROCHEMICAL SOC, V812, P924

[7] Gargini P. A., 1981, International Electron Devices Meeting, P54

[8] GARGINI PA, 1983, RES DEV, V25, P141

[9] GARGINI PA, 1982, P INT RELIABILITY PH, P66

[10] STRUCTURE OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1243 - 1250

[1] [Anonymous], PHYS SEMICONDUCTOR D

[2] BEINGLASS I, 1981, ELECTROCHEM SOC EXT, V812, P921

[3] BLEWER RS, 1984, ELECTROCHEMICAL SOC, V842, P601

[4] BLEWER RS, 1985, ELECTROCHEMICAL SOC, P116

[5] BOMAN M, 1984, ELECTROCHEMICAL SOC, P150

[6] GARGINI P, 1981, ELECTROCHEMICAL SOC, V812, P924

[7] Gargini P. A., 1981, International Electron Devices Meeting, P54

[8] GARGINI PA, 1983, RES DEV, V25, P141

[9] GARGINI PA, 1982, P INT RELIABILITY PH, P66

[10] STRUCTURE OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1243 - 1250