INTERFACE CHARACTERIZATION OF STRAINED INGAAS/INP QUANTUM-WELLS AFTER A GROWTH INTERRUPTION SEQUENCE

被引：10

作者：

SCHWEDLER, R

GALLMANN, B

WOLTER, K

KOHL, A

LEO, K

KURZ, H

JUILLAGUET, S

MASSONE, E

CAMASSEL, J

LAURENTI, JP

BAUMANN, FH

机构：

[1] UNIV MONTPELLIER 2,ETUDE SEMICOND GRP,F-34060 MONTPELLIER,FRANCE

[2] UNIV METZ,CTR LORRAIN OPT & ELECTRON SOLIDES,F-57012 METZ,FRANCE

[3] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED SURFACE SCIENCE | 1993年 / 63卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90087-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have analyzed ultrathin (5-10 monolayers) ln1-xGaxAs/InP (0.17 less-than-or-equal-to x less-than-or-equal-to 1) quantum wells grown by low-pressure metalorganic vapour phase epitaxy using optical spectroscopy and transmission electron microscopy. We find, for all compositions, evidence for a complex interface structure at both the lower and the upper interface. Both originate from interdiffusion of arsenic and phosphorus at growth time. The influence of the interface structure on the optical transition energies is discussed in detail.

引用

页码：187 / 190

页数：4

共 7 条

[1]

CAMASSEL J, UNPUB MATER SCI ENG

[2] EFFECT OF GROWTH-PARAMETERS ON THE INTERFACIAL STRUCTURE OF GAINAS/INP QUANTUM-WELLS [J].