ELECTRON-TUNNELING AT AL-SIO2 INTERFACES

被引：45

作者：

AVRON, M

SHATZKES, M

DISTEFANO, TH

GDULA, RA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 04期

关键词：

D O I：

10.1063/1.329024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2897 / 2908

页数：12

共 36 条

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