SODIUM MOBILITY IN IRRADIATED SIO2

被引：14

作者：

FOWKES, FM ^{[1
]}

WITHERELL, FE ^{[1
]}

机构：

[1] LEHIGH UNIV, CHEM DEPT, BETHLEHEM, PA 18015 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1974年 / NS21卷 / 06期

关键词：

D O I：

10.1109/TNS.1974.6498908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：67 / 72

页数：6

共 24 条

[1] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J].

AUBUCHON, KG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) :117-+

[2] FLAME EMISSION ANALYSIS FOR SODIUM IN SILICON OXIDE FILMS AND ON SILICON SURFACES [J].

BARRY, JE ;

DONEGA, HM ;

BURGESS, TE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) :257-&

[3]

BAXTER RD, 1971, AD738069

[4] ATOMIC ABSORPTION ANALYSIS BY FLAMELESS ATOMIZATION IN A CONTROLLED ATMOSPHERE [J].

DONEGA, HM ;

BURGESS, TE .

ANALYTICAL CHEMISTRY, 1970, 42 (13) :1521-&

[5]

DONEGA HM, 1969, MAY EL SOC M NEW YOR

[6] IMPURITY DEPTH PROFILES BY MICROANALYSIS TECHNIQUES [J].

DUNNING, KL ;

HUGHES, HL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) :243-248

[7] ELECTRIC FIELDS AT SURFACE AND INTERFACE OF SIO2 FILMS ON SILICON [J].

FOWKES, FM ;

BURGESS, TE .

SURFACE SCIENCE, 1969, 13 (01) :184-&

[8]

FOWKES FM, 1966, OCT EL SOC M PHIL

[9]

GOETZBER.A, 1966, AT&T TECH J, V45, P1097

[10]

Hughes H. L., 1964, ELECTRONICS, V37, P58

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