FLAME EMISSION ANALYSIS FOR SODIUM IN SILICON OXIDE FILMS AND ON SILICON SURFACES

被引：11

作者：

BARRY, JE

DONEGA, HM

BURGESS, TE

机构：

来源：

关键词：

D O I：

10.1149/1.2411809

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：257 / &

共 10 条

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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : 862 - +
[2] Dean John A., 1960, FLAME PHOTOMETRY
[3] FEWER DR, 1966, RADCTR66345 TEX INST
[4] KOOI E, 1966, PHILIPS RES REP, V21, P477
[5] MEASUREMENT OF RETENTION OF FLUORIDE BY SILICON AND SILICON DIOXIDE SURFACES
LARRABEE, GB
HEINEN, KG
HARRELL, SA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : 867 - &
[6] INVERSION OF OXIDIZED SILICON SURFACES BY ALKALI METALS
MATHEWS, JR
GRIFFIN, WA
OLSON, KH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) : 899 - &
[7] OSBORNE JF, 1967, ANAL CHEM, V35, P1144
[8] ION TRANSPORT PHENOMENA IN INSULATING FILMS
SNOW, EH
GROVE, AS
DEAL, BE
SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &
[9] YON E, 1966, IEEE T ELECTRON DEV, VED13, P276
[10] [No title captured]