IMPURITY DEPTH PROFILES BY MICROANALYSIS TECHNIQUES

被引:11
作者
DUNNING, KL [1 ]
HUGHES, HL [1 ]
机构
[1] USN,RES LAB,WASHINGTON,DC 20390
关键词
D O I
10.1109/TNS.1972.4326840
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:243 / 248
页数:6
相关论文
共 18 条
[1]   7ICROANALYSIS BY DIRECT OBSERVATION OF NUCLEAR REACTIONS USING A 2 MEV VAN-DE-GRAAFF [J].
AMSEL, G ;
NADAI, JP ;
DARTEMAR.E ;
DAVID, D ;
GIRARD, E ;
MOULIN, J .
NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04) :481-&
[2]  
BONDELID RO, 1958, 2 METER POSITIVE ION
[3]  
BUTLER JW, 1970, T AM NUCL SOC, V13, P57
[4]   MICROANALYSIS OF SI AND S INGASB BY DIRECT OBSERVATION OF RESONANT NUCLEAR REACTIONS [J].
CHEMIN, JF ;
ROTURIER, J ;
SABOYA, B ;
PETIT, GY .
NUCLEAR INSTRUMENTS & METHODS, 1971, 97 (02) :211-&
[5]  
DUNNING KL, 1971, 7230 NAV RES LAB REP
[6]   IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J].
ERIKSSON, L ;
DAVIES, JA ;
JOHANSSON, NG ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :842-+
[7]  
GOVE HE, 1959, NUCLEAR REACTIONS, P293
[8]  
HUGHES HL, 1971, MAR T IEEE REL PHYS
[9]  
JOHNSON WS, 1969, PROJECTED RANGES SEM
[10]  
Mayer J. W., 1970, ION IMPLANTATION SEM