SODIUM MOBILITY IN IRRADIATED SIO2

被引:14
作者
FOWKES, FM [1 ]
WITHERELL, FE [1 ]
机构
[1] LEHIGH UNIV, CHEM DEPT, BETHLEHEM, PA 18015 USA
关键词
D O I
10.1109/TNS.1974.6498908
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:67 / 72
页数:6
相关论文
共 24 条
[11]   DEPENDENCE OF MOS DEVICE RADIATION-SENSITIVITY ON OXIDE IMPURITIES [J].
HUGHES, HL ;
BAXTER, RD ;
PHILLIPS, B .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) :256-263
[12]  
KOOI E, 1965, PHILIPS RES REP, V20, P306
[13]  
KOOI E, 1965, PHILIPS RES REP, V20, P595
[14]   RADIATION RESISTANT MOS DEVICES [J].
LINDMAYER, J ;
NOBLE, WP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (09) :637-+
[15]   FIELD EFFECT STUDIES OF OXIDIZED SILICON SURFACE [J].
LINDMAYER, J .
SOLID-STATE ELECTRONICS, 1966, 9 (03) :225-+
[16]   OXYGEN OUTGASSING CAUSED BY ELECTRON BOMBARDMENT OF GLASS [J].
LINEWEAVER, JL .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1786-&
[17]   EPR STUDY OF IMPURITY-RELATED COLOR CENTERS IN GERMANIUM-DOPED QUARTZ [J].
MACKEY, JH .
JOURNAL OF CHEMICAL PHYSICS, 1963, 39 (01) :74-&
[18]   LOW-ENERGY ION-BOMBARDMENT EFFECTS IN SIO2 [J].
MCCAUGHAN, DV ;
MURPHY, VT .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) :249-255
[19]  
MITCHELL JP, 1967, BELL SYST TECH J, V46, P1
[20]   THE STRUCTURE OF THE COLOUR CENTRES IN SMOKY QUARTZ [J].
OBRIEN, MCM .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1955, 231 (1186) :404-414