DEPENDENCE OF MOS DEVICE RADIATION-SENSITIVITY ON OXIDE IMPURITIES

[1] AUBUCHON KG, 1971, IEEE NUCL S, VNS18, P117

[2] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[3] RADIATION HARDENING OF THERMAL OXIDES ON SILICON BY DISPLACEMENT DAMAGE [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2897 - +

[4] SODIUM DIFFUSION IN SIO2 GLASS [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1968, 51 (09) : 528 - +

[5] GROVE AS, 1967, PHYS TECHNOL S, P263

[6] HUGHES HL, 1971, IEEE T REL PHYSICS S

[7] HUGHES HL, 1969, IEEE NUCL S, VNS16, P195

[8] KING E, 1972, IEEE T NUCL SCI, VNS19

[9] EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) : 388 - &

[10] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +

[1] AUBUCHON KG, 1971, IEEE NUCL S, VNS18, P117

[2] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[3] RADIATION HARDENING OF THERMAL OXIDES ON SILICON BY DISPLACEMENT DAMAGE [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2897 - +

[4] SODIUM DIFFUSION IN SIO2 GLASS [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1968, 51 (09) : 528 - +

[5] GROVE AS, 1967, PHYS TECHNOL S, P263

[6] HUGHES HL, 1971, IEEE T REL PHYSICS S

[7] HUGHES HL, 1969, IEEE NUCL S, VNS16, P195

[8] KING E, 1972, IEEE T NUCL SCI, VNS19

[9] EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) : 388 - &

[10] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +