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RADIATION RESISTANT MOS DEVICES
被引:16
作者
:
LINDMAYER, J
论文数:
0
引用数:
0
h-index:
0
LINDMAYER, J
NOBLE, WP
论文数:
0
引用数:
0
h-index:
0
NOBLE, WP
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1968年
/ ED15卷
/ 09期
关键词
:
D O I
:
10.1109/T-ED.1968.16420
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:637 / +
页数:1
相关论文
共 16 条
[1]
BAER R, 1967 IEEE ANN C NUCL
[2]
TRACER EVALUATION OF HYDROGEN IN STEAM-GROWN SIO2 FILMS
BURKHARD.PJ
论文数:
0
引用数:
0
h-index:
0
BURKHARD.PJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(2P1)
: 196
-
&
[3]
DENNEHY NJ, 1967 IEEE ANN C NUCL
[4]
A RADIATION-INDUCED INSTABILITY IN SILICON MOS TRANSISTORS
DENNEHY, WJ
论文数:
0
引用数:
0
h-index:
0
DENNEHY, WJ
BRUCKER, GJ
论文数:
0
引用数:
0
h-index:
0
BRUCKER, GJ
HOLMESSI.AG
论文数:
0
引用数:
0
h-index:
0
HOLMESSI.AG
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1966,
NS13
(06)
: 273
-
&
[5]
EFFECTS OF SPACE RADIATION OF MOSFET DEVICES AND SOME APPLICATION IMPLICATIONS OF THOSE EFFECTS
GORDON, F
论文数:
0
引用数:
0
h-index:
0
GORDON, F
WANNEMAC.HE
论文数:
0
引用数:
0
h-index:
0
WANNEMAC.HE
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1966,
NS13
(06)
: 262
-
&
[6]
STABILIZATION OF MOS DEVICES
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(07)
: 657
-
+
[7]
Hughes H. L., 1964, ELECTRONICS, V37, P58
[8]
INFLUENCE OF HEAT TREATMENTS AND IONIZING IRRADIATIONS ON CHARGE DISTRIBUTION AND NUMBER OF SURFACE STATES IN SI-SIO2 SYSTEM
KOOI, E
论文数:
0
引用数:
0
h-index:
0
KOOI, E
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(02)
: 238
-
+
[9]
FIELD EFFECT STUDIES OF OXIDIZED SILICON SURFACE
LINDMAYER, J
论文数:
0
引用数:
0
h-index:
0
LINDMAYER, J
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(03)
: 225
-
+
[10]
INVERSION OF OXIDIZED SILICON SURFACES BY ALKALI METALS
MATHEWS, JR
论文数:
0
引用数:
0
h-index:
0
MATHEWS, JR
GRIFFIN, WA
论文数:
0
引用数:
0
h-index:
0
GRIFFIN, WA
OLSON, KH
论文数:
0
引用数:
0
h-index:
0
OLSON, KH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(09)
: 899
-
&
←
1
2
→
共 16 条
[1]
BAER R, 1967 IEEE ANN C NUCL
[2]
TRACER EVALUATION OF HYDROGEN IN STEAM-GROWN SIO2 FILMS
BURKHARD.PJ
论文数:
0
引用数:
0
h-index:
0
BURKHARD.PJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(2P1)
: 196
-
&
[3]
DENNEHY NJ, 1967 IEEE ANN C NUCL
[4]
A RADIATION-INDUCED INSTABILITY IN SILICON MOS TRANSISTORS
DENNEHY, WJ
论文数:
0
引用数:
0
h-index:
0
DENNEHY, WJ
BRUCKER, GJ
论文数:
0
引用数:
0
h-index:
0
BRUCKER, GJ
HOLMESSI.AG
论文数:
0
引用数:
0
h-index:
0
HOLMESSI.AG
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1966,
NS13
(06)
: 273
-
&
[5]
EFFECTS OF SPACE RADIATION OF MOSFET DEVICES AND SOME APPLICATION IMPLICATIONS OF THOSE EFFECTS
GORDON, F
论文数:
0
引用数:
0
h-index:
0
GORDON, F
WANNEMAC.HE
论文数:
0
引用数:
0
h-index:
0
WANNEMAC.HE
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1966,
NS13
(06)
: 262
-
&
[6]
STABILIZATION OF MOS DEVICES
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(07)
: 657
-
+
[7]
Hughes H. L., 1964, ELECTRONICS, V37, P58
[8]
INFLUENCE OF HEAT TREATMENTS AND IONIZING IRRADIATIONS ON CHARGE DISTRIBUTION AND NUMBER OF SURFACE STATES IN SI-SIO2 SYSTEM
KOOI, E
论文数:
0
引用数:
0
h-index:
0
KOOI, E
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(02)
: 238
-
+
[9]
FIELD EFFECT STUDIES OF OXIDIZED SILICON SURFACE
LINDMAYER, J
论文数:
0
引用数:
0
h-index:
0
LINDMAYER, J
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(03)
: 225
-
+
[10]
INVERSION OF OXIDIZED SILICON SURFACES BY ALKALI METALS
MATHEWS, JR
论文数:
0
引用数:
0
h-index:
0
MATHEWS, JR
GRIFFIN, WA
论文数:
0
引用数:
0
h-index:
0
GRIFFIN, WA
OLSON, KH
论文数:
0
引用数:
0
h-index:
0
OLSON, KH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(09)
: 899
-
&
←
1
2
→