A RADIATION-INDUCED INSTABILITY IN SILICON MOS TRANSISTORS

[1] BOSENBERG W, 1965, NASW979 RCA FIN CONT

[2] HEIMAN FP, 1965, IEEE T ELECTRON DEVI, VED12, P167

[3] HOFSTEIN, 1963, P IEEE, V51, P1190

[4] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +

[5] HUGHES H, 1965, IEEE T NUCLEAR SCIEN, VNS12

[6] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 376 - &

[7] KOOI E, 1965, PHILIPS RES REP, V20, P595

[8] MATTAUCH RJ, 1965, P IEEE

[9] DISPLACEMENT DAMAGE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (05) : 78 - +

[10] RUPPRECHT G, PHYS REV, V3

[1] BOSENBERG W, 1965, NASW979 RCA FIN CONT

[2] HEIMAN FP, 1965, IEEE T ELECTRON DEVI, VED12, P167

[3] HOFSTEIN, 1963, P IEEE, V51, P1190

[4] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +

[5] HUGHES H, 1965, IEEE T NUCLEAR SCIEN, VNS12

[6] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 376 - &

[7] KOOI E, 1965, PHILIPS RES REP, V20, P595

[8] MATTAUCH RJ, 1965, P IEEE

[9] DISPLACEMENT DAMAGE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (05) : 78 - +

[10] RUPPRECHT G, PHYS REV, V3