MATRIX ANALYSIS OF DISTRIBUTED SEMICONDUCTOR CIRCUIT MODELS

被引：8

作者：

HENNIG, F ^{[1
]}

SAH, CT ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 09期

关键词：

D O I：

10.1016/0038-1101(73)90211-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1081 / 1083

页数：3

共 19 条

[1]

CRABBE JS, 1971, IEEE T NUCL SCI, VNS18, P410

[2] FREQUENCY-RESPONSE OF SI-SIO2 INTERFACE STATES ON THIN OXIDE MOS CAPACITORS [J].

EATON, DH ;

SAH, CT .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01) :95-+

[3]

FORBES L, 1969, IEEE T ELECTRON DEVI, VED16, P1036

[4] SIMPLIFIED COMPUTATIONAL TREATMENT OF RECOMBINATION CENTERS IN TRANSMISSION-LINE EQUIVALENT CIRCUIT MODEL OF A SEMICONDUCTOR [J].

GREEN, MA ;

TEMPLE, VAK ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1972, 15 (09) :1027-+

[5]

HUELSMAN LP, 1963, CIRCUITS MATRICES LI

[6]

KATTO H, IN PRESS

[7]

MURRAYLASSO MA, 1968, COMPUTER AIDED INTEG, pCH4

[8]

Pipes LA, 1937, PHILOS MAG, V24, P97

[9] Steady state solutions of transmission line equations [J].

Rice, SO .

BELL SYSTEM TECHNICAL JOURNAL, 1941, 20 :131-178

[10] EXACT ANALYTICAL SOLUTION OF HIGH FREQUENCY LOSSLESS MOS CAPACITANCE-VOLTAGE CHARACTERISTICS AND VALIDITY OF CHARGE ANALYSIS [J].

SAH, CT ;

PIERRET, RF ;

TOLE, AB .

SOLID-STATE ELECTRONICS, 1969, 12 (09) :681-+

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