FREQUENCY-RESPONSE OF SI-SIO2 INTERFACE STATES ON THIN OXIDE MOS CAPACITORS

被引：36

作者：

EATON, DH

SAH, CT

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1972年 / 12卷 / 01期

关键词：

D O I：

10.1002/pssa.2210120110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：95 / +

页数：1

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共 27 条

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[2] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
BROWN, DM
GRAY, PV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +
[3] CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
MACKENNA, EL
CASTRO, PL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 997 - &
[4] INTERFACE STATES IN SI-SIO2 INTERFACES
DEULING, H
KLAUSMANN, E
GOETZBERGER, A
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (05) : 559 - +
[5] ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN SI-SIO2 INTERFACES
FAHRNER, W
GOETZBERGER, A
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 16 - +
[6] THEORY AND EXPERIMENTS ON SURFACE 1/F NOISE
FU, HS
SAH, CT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 273 - +
[7] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
BROWN, DM
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &
[8] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[9] SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
SAH, CT
SNOW, EH
DEAL, BE
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2458 - &
[10] ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
[J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387