BEAM EQUIVALENT PRESSURE MEASUREMENTS IN CHEMICAL BEAM EPITAXY

被引：23

作者：

JOYCE, TB

BULLOUGH, TJ

机构：

[1] Department of Materials Science and Engineering, The University of Liverpool, Liverpool, L69 3BX

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90619-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have made beam equivalent pressure measurements for a range of gaseous sources in a CBE system. For group III precursors introduced through a gas line with a given conductance, the beam pressure was found to be independent of the metalorganic species involved. These measurements lead us to question the validity of ''corrected'' BEP data in CBE.

引用

页码：265 / 269

页数：5

共 7 条

[1] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].