OHMIC CONTACT IN ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR DEPOSITION-TIN/SI STRUCTURE

This is the first report that indicates chemical vapor deposition (CVD)-titanium nitride (TiN)/Si ohmic characteristics. The contact resistance of TiN/Si structure that was formed by the electron cyclotron resonance (ECR)CVD method using TiCl4, N-2, H-2 and Ar gases has been investigated. Ohmic characteristics were obtained in both n(+)- and p(+)-Si contacts with only a TiN film without a Ti layer under the TiN film. The contact resistance depends on ECR plasma pretreatment using Ar and H-2 gases just prior to TiN deposition and TiCl4/N-2 gas introduction sequence control. TiN/Si interface analysis indicates that ECRCVD-TiN/Si ohmic contacts were obtained by the removal of native oxide on Si with ECR plasma pretreatment, and by suppression of Si nitridation with gas sequence control on the Si surface.