INTERFACE STATES INDUCED BY THE PRESENCE OF TRAPPED HOLES NEAR THE SILICON-SILICON DIOXIDE INTERFACE

被引：84

作者：

DIMARIA, DJ

BUCHANAN, DA

STATHIS, JH

STAHLBUSH, RE

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 05期

关键词：

D O I：

10.1063/1.359575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Trapped holes are shown to induce]] slow" interface states by their presence that are distinctly different from other types of interface states. These slow states can be alternately introduced and removed by sequential hole generation and annihilation. Various experiments and techniques are used to rule out explanations involving artifacts due to lateral nonuniformities in the hole trapping. © 1995 American Institute of Physics.

引用

页码：2032 / 2040

页数：9

共 39 条

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