ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS

被引:6087
作者
ANDO, T [1 ]
FOWLER, AB [1 ]
STERN, F [1 ]
机构
[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
关键词
D O I
10.1103/RevModPhys.54.437
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:437 / 672
页数:236
相关论文
共 2042 条
[1]  
ABELES B, 1975, ADV PHYS, V24, P407, DOI 10.1080/00018737500101431
[2]  
ABESSONOVA LN, 1975, SOV PHYS SEMICOND+, V9, P626
[3]  
ABESSONOVA LN, 1976, SOV PHYS SEMICOND+, V10, P397
[4]   SURFACE STATES AND 1/F NOISE IN MOS TRANSISTORS [J].
ABOWITZ, G ;
ARNOLD, E ;
LEVENTHA.EA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :775-+
[5]   QUASIPARTICLE LIFETIME IN DISORDERED TWO-DIMENSIONAL METALS [J].
ABRAHAMS, E ;
ANDERSON, PW ;
LEE, PA ;
RAMAKRISHNAN, TV .
PHYSICAL REVIEW B, 1981, 24 (12) :6783-6789
[6]   NON-OHMIC EFFECTS OF ANDERSON LOCALIZATION [J].
ABRAHAMS, E ;
ANDERSON, PW ;
RAMAKRISHNAN, TV .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (06) :827-833
[7]   SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].
ABRAHAMS, E ;
ANDERSON, PW ;
LICCIARDELLO, DC ;
RAMAKRISHNAN, TV .
PHYSICAL REVIEW LETTERS, 1979, 42 (10) :673-676
[8]   LOCALIZED STATES IN INVERTED SILICON-SILICON DIOXIDE INTERFACES [J].
ABRAM, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20) :L379-L381
[9]  
ABRAMOWITZ M, 1964, NBS APPLIED MATH SER, V55
[10]   FREQUENCY-DEPENDENCE OF SURFACE CYCLOTRON-RESONANCE IN SI [J].
ABSTREITER, G ;
KOCH, JF ;
GOY, P ;
COUDER, Y .
PHYSICAL REVIEW B, 1976, 14 (06) :2494-2497