ELECTRONIC-STRUCTURE AND POSITRON STATES AT VACANCIES IN SI AND GAAS

被引：93

作者：

PUSKA, MJ

JEPSEN, O

GUNNARSSON, O

NIEMINEN, RM

机构：

[1] UNIV JYVASKYLA,DEPT PHYS,SF-40100 JYVASKYLA,FINLAND

[2] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.34.2695

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2695 / 2705

页数：11

共 50 条

[1]

Andersen O. K., 1985, HIGHLIGHTS CONDENSED

[2] LINEAR METHODS IN BAND THEORY [J].

ANDERSEN, OK .

PHYSICAL REVIEW B, 1975, 12 (08) :3060-3083

[3] EXPLICIT, 1ST-PRINCIPLES TIGHT-BINDING THEORY [J].

ANDERSEN, OK ;

JEPSEN, O .

PHYSICAL REVIEW LETTERS, 1984, 53 (27) :2571-2574

[4]

[Anonymous], 1983, POSITRON SOLID STATE

[5] ELECTRON LIQUID IN COLLECTIVE DESCRIPTION .3. POSITRON-ANNIHILATION [J].

ARPONEN, J ;

PAJANNE, E .

ANNALS OF PHYSICS, 1979, 121 (1-2) :343-389

[6] ANGULAR-CORRELATION IN POSITRON-ANNIHILATION [J].

ARPONEN, J ;

PAJANNE, E .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1979, 9 (12) :2359-2376

[7] ASGA ANTISITE DEFECT IN GAAS [J].

BACHELET, GB ;

SCHLUTER, M ;

BARAFF, GA .

PHYSICAL REVIEW B, 1983, 27 (04) :2545-2547

[8] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895

[9] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979

[10] MIGRATION OF INTERSTITIALS IN SILICON [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1984, 30 (06) :3460-3469

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